| PART |
Description |
Maker |
| MIE-524A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| SHF-0186 |
DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET 的DC - 12千兆赫，0.5瓦的AlGaAs /砷化镓异质结场效应晶体管
DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
|
Electronic Theatre Controls, Inc.
ETC[ETC]
Stanford Microdevices
|
| ASDL-4671 ASDL-4671-C22 ASDL-4671-C31 ASDL-4671-D2 |
High Performance T-1 (3mm) AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
|
| L532 |
IGBT phaseleg in ISOPLUS i4-PAC IGBTphaseleg在ISOPLUS i4 - PAC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| BL-B6174 |
Chip material: AlGaAs/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| HSDL-4260 |
High-Power T-1篓煤 (5mm) AlGaAs Infrared (875nm) Lamp
High-Power T-1? (5mm) AlGaAs Infrared (875nm) Lamp
|
Lite-On Technology Corporation
|
| MIE-824A4 |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-536A2U MIE-526A4U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| BA-4D7UW-A |
super red chips which are made from AlGaAs on GaAs substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BD-E286RD |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BD-C51DRD |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
